Summary form only given. In summary, very low threshold current etched-pillar InGaAs DBR QW VCSELs have been fabricated using AlAs-oxidation. Monotonically decreasing threshold currents were observed for down to very small area devices, indicating suppression of diameter dependent, optical scattering loss caused by etched-pillar sidewalls.
Reduced threshold bottom emitting vertical cavity lasers by AlAs oxidation
01.01.1995
172688 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Reduced Threshold Bottom Emitting Vertical Cavity Lasers by AlAs Oxidation
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