Summary form only given. In summary, very low threshold current etched-pillar InGaAs DBR QW VCSELs have been fabricated using AlAs-oxidation. Monotonically decreasing threshold currents were observed for down to very small area devices, indicating suppression of diameter dependent, optical scattering loss caused by etched-pillar sidewalls.


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    Titel :

    Reduced threshold bottom emitting vertical cavity lasers by AlAs oxidation


    Beteiligte:
    Floyd, P.D. (Autor:in) / Thibeault, B.J. (Autor:in) / Coldren, L.A. (Autor:in) / Merz, J.L. (Autor:in)


    Erscheinungsdatum :

    01.01.1995


    Format / Umfang :

    172688 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Reduced Threshold Bottom Emitting Vertical Cavity Lasers by AlAs Oxidation

    IEEE / Lasers and Electro-Optics Society | British Library Conference Proceedings | 1995




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    Singh, B. P. / Sato, N. / Narazaki, W. et al. | British Library Conference Proceedings | 1997