We discuss total ionizing dose effects and reliability of graphene-based electronics and non-volatile memory devices. The degradation after radiation exposure of these structures derives primarily from surface oxygen adsorption. Excellent stability and memory retention are observed for ionizing radiation exposure or constant-voltage stress. Cycling of the memory state leads to a significant degradation of the performance.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Total ionizing dose effects and reliability of graphene-based non-volatile memory devices




    Publication date :

    2013-03-01


    Size :

    20748401 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Demonstrating a holographic memory having 100 Mrad total-ionizing-dose tolerance

    Ito, Yoshizumi / Watanabe, Minoru / Ogiwara, Akifumi | IEEE | 2016


    Total Dose Radiation Effects in Si Nanocrystal Non-Volatile Memory Transistors

    Petkov, M. P. / Bell, L. D. / Walters, R. J. et al. | British Library Conference Proceedings | 2005




    MIC4427 MOSFET Driver Total Ionizing Dose Test Report

    Alyson Topper / Megan Casey | NTRS | 2020