We discuss total ionizing dose effects and reliability of graphene-based electronics and non-volatile memory devices. The degradation after radiation exposure of these structures derives primarily from surface oxygen adsorption. Excellent stability and memory retention are observed for ionizing radiation exposure or constant-voltage stress. Cycling of the memory state leads to a significant degradation of the performance.
Total ionizing dose effects and reliability of graphene-based non-volatile memory devices
2013-03-01
20748401 byte
Conference paper
Electronic Resource
English
Total Dose Radiation Effects in Si Nanocrystal Non-Volatile Memory Transistors
British Library Conference Proceedings | 2005
|Semicoa JANS2N2907AUB Total Ionizing Dose Test Report
NTRS | 2022
|MIC4427 MOSFET Driver Total Ionizing Dose Test Report
NTRS | 2020
|