We discuss total ionizing dose effects and reliability of graphene-based electronics and non-volatile memory devices. The degradation after radiation exposure of these structures derives primarily from surface oxygen adsorption. Excellent stability and memory retention are observed for ionizing radiation exposure or constant-voltage stress. Cycling of the memory state leads to a significant degradation of the performance.
Total ionizing dose effects and reliability of graphene-based non-volatile memory devices
01.03.2013
20748401 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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