We discuss total ionizing dose effects and reliability of graphene-based electronics and non-volatile memory devices. The degradation after radiation exposure of these structures derives primarily from surface oxygen adsorption. Excellent stability and memory retention are observed for ionizing radiation exposure or constant-voltage stress. Cycling of the memory state leads to a significant degradation of the performance.


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    Titel :

    Total ionizing dose effects and reliability of graphene-based non-volatile memory devices


    Beteiligte:


    Erscheinungsdatum :

    01.03.2013


    Format / Umfang :

    20748401 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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