We fabricated 850 nm GaAs VCSELs with eight straight trenches crossing each other on the top surface. The diameter of an oxide confinement aperture was 10 /spl mu/m. We introduced a /spl pi/-phase shift layer alternately on. the eight separated surfaces by using a focused ion beam etch.


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    Title :

    Single high order transverse mode VCSELs


    Contributors:
    Koyama, F. (author) / Shinada, S. (author)


    Publication date :

    2002-01-01


    Size :

    168936 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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