We fabricated 850 nm GaAs VCSELs with eight straight trenches crossing each other on the top surface. The diameter of an oxide confinement aperture was 10 /spl mu/m. We introduced a /spl pi/-phase shift layer alternately on. the eight separated surfaces by using a focused ion beam etch.


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    Titel :

    Single high order transverse mode VCSELs


    Beteiligte:
    Koyama, F. (Autor:in) / Shinada, S. (Autor:in)


    Erscheinungsdatum :

    2002-01-01


    Format / Umfang :

    168936 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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