We fabricated 850 nm GaAs VCSELs with eight straight trenches crossing each other on the top surface. The diameter of an oxide confinement aperture was 10 /spl mu/m. We introduced a /spl pi/-phase shift layer alternately on. the eight separated surfaces by using a focused ion beam etch.
Single high order transverse mode VCSELs
2002-01-01
168936 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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