A BiCMOS fully differential amplifier was designed for use with a specified power supply of 3.3 V, requiring a 100 μA current bias and utilizing only heterojunction bipolar npn and PMOS transistors because of their demonstrated performance in both extreme temperature ranges (−180 °C to +120 °C) and radiation-rich environments. One unique feature of this design is that two common-mode feedback circuits were employed to control both the input stage and output stage independently. Regulating the common-mode level between the input and output stages produced better stability over temperature for each stage. Special considerations were taken in the layout to increase the immunity of latch-up and noise and decrease mismatch. The BiCMOS amplifier described successfully demonstrates the use of the commercially available IBM SiGe 5AM process to produce reliable operation in extreme temperature and radiation environments.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    SiGe BiCMOS fully differential amplifier for extreme temperature range applications


    Contributors:


    Publication date :

    2009-03-01


    Size :

    726334 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    SiGe BiCMOS comparator for extreme environment applications

    Sissons, Benjamin / Mantooth, Alan / Jia Di, et al. | IEEE | 2015


    Noise Behaviour in SiGe BiCMOS Technology

    Regis, M. / Plana, R. / Borgarino, M. et al. | British Library Conference Proceedings | 2000


    Cryogenic operation of SiGe BiCMOS voltage references

    Najafizadeh, Laleh / Bellini, Marco / Diestelhorst, Ryan et al. | Tema Archive | 2006


    A 30.5 GHz fully integrated frequency synthesizer in SiGe BiCMOS for 61 GHz and 122 GHz radar applications

    Kucharski, Maciej / Ergintav, Arzu / Herzel, Frank et al. | IEEE | 2017


    BiCMOS variable gain transimpedance amplifier for automotive applications

    Ridder, T. de / Ossieur, P. / Yin, X. et al. | Tema Archive | 2008