This paper presents a 90 nm SiGe BiCMOS comparator designed for extreme environment use. A unique circuit characteristic of this comparator topology is that it uses only one NMOS transistor in the circuit. The rest of the circuit is comprised of PMOS transistors and NPN HBTs in order to maintain radiation hardiness. The circuit was simulated across a temperature range of −195 °C to 155 °C. The circuit was simulated at cryogenic temperatures using several models developed at the University of Arkansas (UA) and at Georgia Tech. The comparator produces a maximum resolution of 500 µV with an input range of 0.05–0.6 V in a 1.2 V process. A maximum propagation delay of less than 20 ns was also achieved. These specifications were based off of its intended application in a successive approximation register analog-to-digital converter also being developed at the UA as part of a NASA Space Technology Research Opportunities-Early Stage Innovations (STRO-ESI) project.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    SiGe BiCMOS comparator for extreme environment applications


    Contributors:


    Publication date :

    2015-03-01


    Size :

    11117932 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    SiGe BiCMOS fully differential amplifier for extreme temperature range applications

    Cornett, Kimberly J. / Fu, Guoyuan / Escorcia, Ivonne et al. | IEEE | 2009


    Noise Behaviour in SiGe BiCMOS Technology

    Regis, M. / Plana, R. / Borgarino, M. et al. | British Library Conference Proceedings | 2000


    Cryogenic operation of SiGe BiCMOS voltage references

    Najafizadeh, Laleh / Bellini, Marco / Diestelhorst, Ryan et al. | Tema Archive | 2006



    Cold-capable, radiation-hardened SiGe BiCMOS wireline transceivers

    England, Troy / Chatterjee, Chandim / Lourenco, Nelson et al. | IEEE | 2014