This paper presents a 90 nm SiGe BiCMOS comparator designed for extreme environment use. A unique circuit characteristic of this comparator topology is that it uses only one NMOS transistor in the circuit. The rest of the circuit is comprised of PMOS transistors and NPN HBTs in order to maintain radiation hardiness. The circuit was simulated across a temperature range of −195 °C to 155 °C. The circuit was simulated at cryogenic temperatures using several models developed at the University of Arkansas (UA) and at Georgia Tech. The comparator produces a maximum resolution of 500 µV with an input range of 0.05–0.6 V in a 1.2 V process. A maximum propagation delay of less than 20 ns was also achieved. These specifications were based off of its intended application in a successive approximation register analog-to-digital converter also being developed at the UA as part of a NASA Space Technology Research Opportunities-Early Stage Innovations (STRO-ESI) project.
SiGe BiCMOS comparator for extreme environment applications
2015-03-01
11117932 byte
Conference paper
Electronic Resource
English
Noise Behaviour in SiGe BiCMOS Technology
British Library Conference Proceedings | 2000
|Cryogenic operation of SiGe BiCMOS voltage references
Tema Archive | 2006
|Cold-Capable, Radiation-Hardened SiGe BiCMOS Wireline Transceivers
Online Contents | 2014
|