The proposed work investigates the operational robustness and design reliability of 2D and 3D structures of the designed nano-scale devices and circuits, when irradiated by high-energy particles. The TID analysis are performed on 22nm FinFET devices, which is generated by using GDS2MESH tool. The paper presents a methodology for particle strike simulation to understand the ionization charge distribution and identify the vulnerable nodes in the 3D structure of a 22nm FinFET SRAM circuit by varying the Linear Energy Transfer (LET) values from 10MeV to 200Mev. This study is useful in validating the physical structure of a circuit in mitigating the effects of particle strike. In case of memory cell the vulnerable nodes are identified and guarded to isolate the charge distribution due to ionization.


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    Title :

    Total Ionizing Dose and Radiation Particle Strike Analysis of Nanoscale FinFET Devices and Circuits


    Contributors:


    Publication date :

    2020-11-05


    Size :

    569374 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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