The proposed work investigates the operational robustness and design reliability of 2D and 3D structures of the designed nano-scale devices and circuits, when irradiated by high-energy particles. The TID analysis are performed on 22nm FinFET devices, which is generated by using GDS2MESH tool. The paper presents a methodology for particle strike simulation to understand the ionization charge distribution and identify the vulnerable nodes in the 3D structure of a 22nm FinFET SRAM circuit by varying the Linear Energy Transfer (LET) values from 10MeV to 200Mev. This study is useful in validating the physical structure of a circuit in mitigating the effects of particle strike. In case of memory cell the vulnerable nodes are identified and guarded to isolate the charge distribution due to ionization.


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    Titel :

    Total Ionizing Dose and Radiation Particle Strike Analysis of Nanoscale FinFET Devices and Circuits


    Beteiligte:
    Spoorthi, Ch. (Autor:in) / Grace, Jessy (Autor:in) / Chavan, Ameet (Autor:in) / Rao, Chinnam SV Maruthi (Autor:in)


    Erscheinungsdatum :

    2020-11-05


    Format / Umfang :

    569374 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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