In this paper, the detailed characterization of the MBE grown GaN/sub y/As/sub 1-x-y/Bi/sub x/ layers are reported. The quantitative effect of Bi and N incorporations on the PL peak energies and the temperature coefficients of the PL peak energies of GaN/sub y/As/sub 1-x-y/Bi/sub x/ with various GaBi molar fractions are discussed.
GaN/sub y/As/sub 1-x-y/Bi/sub x/ semiconductor alloy for temperature-insensitive-wavelength lasers in WDM optical communication
2005-01-01
1539233 byte
Conference paper
Electronic Resource
English
British Library Conference Proceedings | 2005
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