In this paper, the detailed characterization of the MBE grown GaN/sub y/As/sub 1-x-y/Bi/sub x/ layers are reported. The quantitative effect of Bi and N incorporations on the PL peak energies and the temperature coefficients of the PL peak energies of GaN/sub y/As/sub 1-x-y/Bi/sub x/ with various GaBi molar fractions are discussed.


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    Title :

    GaN/sub y/As/sub 1-x-y/Bi/sub x/ semiconductor alloy for temperature-insensitive-wavelength lasers in WDM optical communication


    Contributors:
    Oe, K. (author) / Gan Feng, (author) / Yoshimoto, M. (author) / Wei Huang, (author)


    Publication date :

    2005-01-01


    Size :

    1539233 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    GaN~yAs~1~-~x~-~yBi~x Semiconductor Alloy for Temperature- Insensitive- Wavelength Lasers in WDM Optical Communication

    IEEE Lasers and Electro-optics Society | British Library Conference Proceedings | 2005




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    Tanobe, H. / Kondo, Y. / Kadota, Y. et al. | British Library Conference Proceedings | 1996