LDs in WDM systems must be equipped with Peltier elements to stabilize LD temperature. To solve this problem, the use of temperature-independent bandgap semiconductors as an active layer of LDs was proposed We proposed Tl-containing quaternary semiconductors TlInGaP and TlInGaAs as new Ill-V semiconductors showing temperature-independent bandgap energy for the possible application to the temperature-stable lasing wavelength laser diodes.


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    Title :

    Tl-containing semiconductors for temperature-insensitive wavelength semiconductor lasers


    Contributors:
    Asahi, H. (author) / Lee, H.J. (author) / Fujiwara, A. (author) / Imada, A. (author) / Zhou, Y.K. (author)


    Publication date :

    2002-01-01


    Size :

    100571 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




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