LDs in WDM systems must be equipped with Peltier elements to stabilize LD temperature. To solve this problem, the use of temperature-independent bandgap semiconductors as an active layer of LDs was proposed We proposed Tl-containing quaternary semiconductors TlInGaP and TlInGaAs as new Ill-V semiconductors showing temperature-independent bandgap energy for the possible application to the temperature-stable lasing wavelength laser diodes.
Tl-containing semiconductors for temperature-insensitive wavelength semiconductor lasers
The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society ; 2 ; 889-890 vol.2
2002-01-01
100571 byte
Conference paper
Electronic Resource
English
ThCC1 TI-containing Semiconductors for Temperature-Insensitive Wavelength Semiconductor Lasers
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