Summary form only given. We describe a high performance InAlGaAs/GaAs superluminescent diode operating in the 830 nm wavelength window, exhibiting spectral modulation below 1% at powers up to and exceeding 50 mW, with good coupling efficiency into polarisation maintaining (PMF) fiber, and high reliability. A longitudinal spatial hole burning model is used to describe device performance.<>


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    InAlGaAs/GaAs strained-layer superluminescent diodes


    Contributors:
    Murison, R. (author) / Moore, A. (author) / Henderson, R. (author) / Holehouse, N. (author)

    Published in:

    Publication date :

    1993-01-01


    Size :

    27815 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    InAlGaAs/GaAs Strained-Layer Superluminescent Diodes

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1993


    Angled Stripe Superluminescent Diodes

    Alphonse, G.A. | IEEE | 1990


    High-power superluminescent diodes [3551-21]

    Qu, Y. / Gao, X. / Zhang, B. et al. | British Library Conference Proceedings | 1998


    Passive components tested by superluminescent diodes

    Liu, Y. | British Library Online Contents | 2000


    Theoretical and Numerical Analysis of Superluminescent Diodes

    Park, J. / Li, X. | British Library Online Contents | 2006