Summary form only given. We describe a high performance InAlGaAs/GaAs superluminescent diode operating in the 830 nm wavelength window, exhibiting spectral modulation below 1% at powers up to and exceeding 50 mW, with good coupling efficiency into polarisation maintaining (PMF) fiber, and high reliability. A longitudinal spatial hole burning model is used to describe device performance.<>


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    Titel :

    InAlGaAs/GaAs strained-layer superluminescent diodes


    Beteiligte:
    Murison, R. (Autor:in) / Moore, A. (Autor:in) / Henderson, R. (Autor:in) / Holehouse, N. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    01.01.1993


    Format / Umfang :

    27815 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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