Summary form only given. We describe a high performance InAlGaAs/GaAs superluminescent diode operating in the 830 nm wavelength window, exhibiting spectral modulation below 1% at powers up to and exceeding 50 mW, with good coupling efficiency into polarisation maintaining (PMF) fiber, and high reliability. A longitudinal spatial hole burning model is used to describe device performance.<>
InAlGaAs/GaAs strained-layer superluminescent diodes
Proceedings of LEOS '93 ; 602
01.01.1993
27815 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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