Using a multisection device technique, we have carried out internal loss measurement comparison between two types of InGaAs/InAlGaAs quantum well structures. Active region of one structure consists of multiple width wells; and the other structure includes conventional identical width wells.
Investigation of internal optical losses in multiple width quantum well lasers in comparison to conventional identical quantum well lasers
2003-01-01
82946 byte
Conference paper
Electronic Resource
English
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