Using a multisection device technique, we have carried out internal loss measurement comparison between two types of InGaAs/InAlGaAs quantum well structures. Active region of one structure consists of multiple width wells; and the other structure includes conventional identical width wells.
Investigation of internal optical losses in multiple width quantum well lasers in comparison to conventional identical quantum well lasers
01.01.2003
82946 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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