Silicon modulator based on interdigitated PN junctions integrated in a ring resonator is experimentally demonstrated, showing a 4 dB Extinction Ratio at 10 Gbit/s.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    10 Gbit/s silicon modulator based on interdigitated PN junctions


    Contributors:
    Ziebell, M. (author) / Marris-Morini, D. (author) / Rasigade, G. (author) / Crozat, P. (author) / Fedeli, J. (author) / Grosse, P. (author) / Cassan, E. (author) / Vivien, L. (author)


    Publication date :

    2011-09-01


    Size :

    423488 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




    10 Gbit/s silicon optical modulator with 8 dB extinction ratio

    Rasigade, G. / Marris-Morini, D. / Ziebell, M. et al. | IEEE | 2011


    10 Gbit/s Silicon modulator and germanium detector chip-to-chip optical link

    Ziebell, M. l. / Marris-Morini, D. / Rasigade, G. et al. | British Library Online Contents | 2012


    Equalization of PAM-4 Signal Generated by Silicon Microring Modulator for 64-Gbit/s Transmission

    Tzu, T. C. / Hsu, Y. / Chuang, C. Y. et al. | British Library Online Contents | 2017


    High-Speed Coplanar Waveguide Based Submount for 40 Gbit/s Electroabsorption Modulator

    Xiong, B. / Tian, J. / Wang, J. et al. | British Library Online Contents | 2005