A family of X-band MMIC power amplifiers using a low cost GaAs pHEMT process is reported. The stepper-based volume 0.5 micron and 0.25 micron GaAs pHEMT processes utilize 4 inter-level metallisation and four dielectric layers for high frequency performance whilst maintaining the economies of scale of 150mm (6") diameter substrates. The fabricated GaAs X-Band PA MMICs exhibit SW to low NY output power under pulsed conditions; 16dB of power gain and power added efficiencies approaching 40%. Excellent repeatability and high yields over a number of wafers have been demonstrated. The design and GaAs process approach taken here with DUV stepper and 150 mm wafer diameter will lead to a significant cost reduction for high performance power amplifier MMICs up to 30GHz.


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    Title :

    Low cost X-band power amplifier MMIC


    Contributors:
    Bosch, W. (author) / Mayock, J.G.E. (author) / O'Keefe, M.F. (author) / McMonagle, J. (author)


    Publication date :

    2006-03-01


    Size :

    1163309 byte




    Type of media :

    Article (Journal)


    Type of material :

    Electronic Resource


    Language :

    English



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