A family of X-band MMIC power amplifiers using a low cost GaAs pHEMT process is reported. The stepper-based volume 0.5 micron and 0.25 micron GaAs pHEMT processes utilize 4 inter-level metallisation and four dielectric layers for high frequency performance whilst maintaining the economies of scale of 150mm (6") diameter substrates. The fabricated GaAs X-Band PA MMICs exhibit SW to low NY output power under pulsed conditions; 16dB of power gain and power added efficiencies approaching 40%. Excellent repeatability and high yields over a number of wafers have been demonstrated. The design and GaAs process approach taken here with DUV stepper and 150 mm wafer diameter will lead to a significant cost reduction for high performance power amplifier MMICs up to 30GHz.


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    Titel :

    Low cost X-band power amplifier MMIC


    Beteiligte:
    Bosch, W. (Autor:in) / Mayock, J.G.E. (Autor:in) / O'Keefe, M.F. (Autor:in) / McMonagle, J. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    2006-03-01


    Format / Umfang :

    1163309 byte




    Medientyp :

    Aufsatz (Zeitschrift)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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