We have developed spot-size converter integrated laser diodes (SS-LDs) that include a mechanism for matching the optical field with the fiber and the planar lightwave circuit (PLC). We report the achievement of: reproducible lasing characteristics from 2-inch wafers; stable characteristics up to high temperature; and long-term stability at 85/spl deg/C. The taper-layer in the SS region is butt-jointed to the active layer. The merit of the butt-joint structure is that it allows the independent structural optimization of the active and SS regions. The active layer consists of compressive strained multi-quantum-well (MQW) structure with 8 wells to increase the maximum operation temperature effectively. The strain is 1.2% in InGaAsP wells, which are 6-nm thick. The taper layer consists of a 1.1-/spl mu/m-bandgap bulk layer. The taper-layer thickness changes exponentially from the butt-joint portion to the front facet, which effectively reduces radiation loss in the SS region.


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    Title :

    1.3-/spl mu/m spot-size converter integrated laser diodes (SS-LDs) for access network applications


    Contributors:
    Tohmori, Y. (author) / Itaya, Y. (author) / Toba, H. (author)


    Publication date :

    1997-01-01


    Size :

    206706 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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