We have developed spot-size converter integrated laser diodes (SS-LDs) that include a mechanism for matching the optical field with the fiber and the planar lightwave circuit (PLC). We report the achievement of: reproducible lasing characteristics from 2-inch wafers; stable characteristics up to high temperature; and long-term stability at 85/spl deg/C. The taper-layer in the SS region is butt-jointed to the active layer. The merit of the butt-joint structure is that it allows the independent structural optimization of the active and SS regions. The active layer consists of compressive strained multi-quantum-well (MQW) structure with 8 wells to increase the maximum operation temperature effectively. The strain is 1.2% in InGaAsP wells, which are 6-nm thick. The taper layer consists of a 1.1-/spl mu/m-bandgap bulk layer. The taper-layer thickness changes exponentially from the butt-joint portion to the front facet, which effectively reduces radiation loss in the SS region.


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    Titel :

    1.3-/spl mu/m spot-size converter integrated laser diodes (SS-LDs) for access network applications


    Beteiligte:
    Tohmori, Y. (Autor:in) / Itaya, Y. (Autor:in) / Toba, H. (Autor:in)


    Erscheinungsdatum :

    01.01.1997


    Format / Umfang :

    206706 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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