Use of thin oxide apertures placed at an optical node and spatially selective oxidation allow monolithic integration of uniform, ultralow threshold surface- and substrate-emitting VCSEL's on a single epitaxial wafer for free-space interconnect systems.
Ultralow threshold monolithically integrated surface and substrate emitting vertical cavity surface emitting lasers with properties controlled by oxide aperture placement
1998-01-01
167684 byte
Conference paper
Electronic Resource
English
British Library Conference Proceedings | 1998
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