Use of thin oxide apertures placed at an optical node and spatially selective oxidation allow monolithic integration of uniform, ultralow threshold surface- and substrate-emitting VCSEL's on a single epitaxial wafer for free-space interconnect systems.


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    Title :

    Ultralow threshold monolithically integrated surface and substrate emitting vertical cavity surface emitting lasers with properties controlled by oxide aperture placement


    Contributors:
    Bond, A.E. (author)


    Publication date :

    1998-01-01


    Size :

    167684 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English