Use of thin oxide apertures placed at an optical node and spatially selective oxidation allow monolithic integration of uniform, ultralow threshold surface- and substrate-emitting VCSEL's on a single epitaxial wafer for free-space interconnect systems.
Ultralow threshold monolithically integrated surface and substrate emitting vertical cavity surface emitting lasers with properties controlled by oxide aperture placement
01.01.1998
167684 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
British Library Conference Proceedings | 1998
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