A heterojunction phototransistor is placed within the lower mirror of an AlGaAs DBR QW VCSEL laser. By sampling a small fraction of the internal optical power, the phototransistor controls the laser's continuous wave output power which has an application in optical disc storage systems.


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    Titel :

    Deep red vertical cavity surface emitting lasers with monolithically integrated heterojunction phototransistors for output power control


    Beteiligte:
    Lott, J.A. (Autor:in) / Hyun-Kuk Shin, (Autor:in) / Yong-Hee Lee, (Autor:in)


    Erscheinungsdatum :

    1996-01-01


    Format / Umfang :

    159100 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch





    Optoelectronic Exclusive-OR Using Phototransistors and Vertical Cavity Lasers

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1993



    Vertical Cavity Surface Emitting Lasers for Integrated Optoelectronics

    Coldren, L. A. / IEEE | British Library Conference Proceedings | 1992