The strong electroabsorption modulation possible in Ge/SiGe quantum wells promises efficient, CMOS-compatible integrated optical modulators. We demonstrate surface-normal asymmetric Fabry-Perot and microdisk resonator modulators employing Ge quantum wells grown on silicon.


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    Title :

    Ge quantum well resonator modulators


    Contributors:
    Edwards, E. H. (author) / Audet, R. M. (author) / Fei, E. (author) / Shambat, G. (author) / Schaevitz, R. K. (author) / Yiwen Rong, (author) / Claussen, S. A. (author) / Kamins, T. I. (author) / Vuckovic, J. (author) / Harris, J. S. (author)


    Publication date :

    2011-09-01


    Size :

    409831 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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