We study the apparent substrate temperature oscillation during the whole growth of MBE-VCSEL. The accurate growth rate and mode wavelength are measured during the growth. The InGaAs-GaAs VCSEL with threshold current less than 200 /spl mu/A was achieved.
In situ thickness monitoring and adjusting during MBE growth for VCSEL
1996-01-01
155289 byte
Conference paper
Electronic Resource
English
In Situ Thickness Monitoring and Adjusting During MBE Growth for VCSEL
British Library Conference Proceedings | 1996
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