We study the apparent substrate temperature oscillation during the whole growth of MBE-VCSEL. The accurate growth rate and mode wavelength are measured during the growth. The InGaAs-GaAs VCSEL with threshold current less than 200 /spl mu/A was achieved.


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    Title :

    In situ thickness monitoring and adjusting during MBE growth for VCSEL


    Contributors:
    Zhong Pan, (author) / Zengqi Zhou, (author) / Yaowang Lin, (author) / Zhichan Niu, (author) / Yi Zhang, (author) / Ronghan Wu, (author) / Wei Wang, (author)


    Publication date :

    1996-01-01


    Size :

    155289 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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