We study the apparent substrate temperature oscillation during the whole growth of MBE-VCSEL. The accurate growth rate and mode wavelength are measured during the growth. The InGaAs-GaAs VCSEL with threshold current less than 200 /spl mu/A was achieved.


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    Titel :

    In situ thickness monitoring and adjusting during MBE growth for VCSEL


    Beteiligte:
    Zhong Pan, (Autor:in) / Zengqi Zhou, (Autor:in) / Yaowang Lin, (Autor:in) / Zhichan Niu, (Autor:in) / Yi Zhang, (Autor:in) / Ronghan Wu, (Autor:in) / Wei Wang, (Autor:in)


    Erscheinungsdatum :

    1996-01-01


    Format / Umfang :

    155289 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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