1.3 /spl mu/m-range GaInNAs-based strain-compensated 5QWs lasers were successfully grown for the first time. The lasers oscillated under pulsed operation at 1.282 /spl mu/m at room temperature with the very low threshold current density per well of 160 A/cm/sup 2/ at 900 /spl mu/m-long cavity.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Very low threshold current density of 13 /spl mu/m-range GaInNAsSb/GaNAs 5QWs lasers


    Contributors:
    Setiagung, C. (author) / Shimizu, H. (author) / Kumada, K. (author) / Kasukawa, A. (author)


    Publication date :

    2002-01-01


    Size :

    121453 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Very Low Threshold Current Density of 1.3 mum-range GaInNAsSb/GaNAs 5QWs Lasers

    Institute of Electrical and Electronics Engineers | British Library Conference Proceedings | 2002


    GaInNAsSb/GaNAs VCSELs at 1.46 /spl mu/m

    Wistey, M.A. / Bank, S.R. / Yuen, H.B. et al. | IEEE | 2004


    TuC2 1.3mum-band Low Threshold GaInNAsSb Quantum Well Lasers

    IEEE | British Library Conference Proceedings | 2002


    1.55 mum GaInNAsSb Lasers on GaAs

    Bank, S. | British Library Conference Proceedings | 2005


    1.3 /spl mu/m-band low threshold GaInNAsSb quantum well lasers

    Shimizu, H. / Setiagung, C. / Ariga, M. et al. | IEEE | 2002