1.3 /spl mu/m-range GaInNAs-based strain-compensated 5QWs lasers were successfully grown for the first time. The lasers oscillated under pulsed operation at 1.282 /spl mu/m at room temperature with the very low threshold current density per well of 160 A/cm/sup 2/ at 900 /spl mu/m-long cavity.
Very low threshold current density of 13 /spl mu/m-range GaInNAsSb/GaNAs 5QWs lasers
2002-01-01
121453 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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