1.3 /spl mu/m-range GaInNAs-based strain-compensated 5QWs lasers were successfully grown for the first time. The lasers oscillated under pulsed operation at 1.282 /spl mu/m at room temperature with the very low threshold current density per well of 160 A/cm/sup 2/ at 900 /spl mu/m-long cavity.


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    Titel :

    Very low threshold current density of 13 /spl mu/m-range GaInNAsSb/GaNAs 5QWs lasers


    Beteiligte:
    Setiagung, C. (Autor:in) / Shimizu, H. (Autor:in) / Kumada, K. (Autor:in) / Kasukawa, A. (Autor:in)


    Erscheinungsdatum :

    2002-01-01


    Format / Umfang :

    121453 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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