1.3 /spl mu/m-range GaInNAsSb quantum well lasers that include small amount of Sb as the composition were confirmed to increase the critical thickness at which the growth mode changes from the 2-dimentional (2-D) growth to the 3-dimentional (3-D) growth. By adopting GaNAs barriers instead of GaAs barriers, we obtained the very low Jth of 160A/cm/sup 2//well up to 5QWs. We applied this material to the VCSELs, and the obtained threshold currents of 10ch-arrays are as uniform as 1.85/spl plusmn/0.15mA at 25/spl deg/C.


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    Titel :

    1.3 /spl mu/m-band low threshold GaInNAsSb quantum well lasers


    Beteiligte:
    Shimizu, H. (Autor:in) / Setiagung, C. (Autor:in) / Ariga, M. (Autor:in) / Kumada, K. (Autor:in) / Hama, T. (Autor:in) / Ueda, N. (Autor:in) / Iwai, N. (Autor:in) / Kasukawa, A. (Autor:in)


    Erscheinungsdatum :

    2002-01-01


    Format / Umfang :

    144152 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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