By increasing the optical-cavity thickness of SCH-SL-DQW InGaAs/InGaP/GaAs (/spl lambda/=0.98 /spl mu/m) lasers from 0.2 /spl mu/m to 1.0 /spl mu/m the internal loss decreases fivefold to /spl sim/1.5 cm/sup -1/, and the transverse spot size doubles to 0.6 /spl mu/m (FWHM). As a result, 100 /spl mu/m-aperture devices emit up to 8.1 W CW from their front facets.


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    Title :

    8 W CW front-facet power from 100 /spl mu/m-aperture, Al-free, 0.98 /spl mu/m diode lasers with large optical cavity


    Contributors:
    Mawst, L.J. (author) / Bhattacharya, A. (author) / Lopez, J. (author) / Botez, D. (author) / Garbuzov, D.Z. (author) / DeMarco, L. (author) / Connolly, J.C. (author) / Jansen, M. (author) / Fang, F. (author) / Nabiev, R.F. (author)


    Publication date :

    1996-01-01


    Size :

    161878 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    8W CW Front-Facet Power from 100 m-aperture, Al-free, 0.98 m Diode Lasers with Large Optical Cavity

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