By increasing the optical-cavity thickness of SCH-SL-DQW InGaAs/InGaP/GaAs (/spl lambda/=0.98 /spl mu/m) lasers from 0.2 /spl mu/m to 1.0 /spl mu/m the internal loss decreases fivefold to /spl sim/1.5 cm/sup -1/, and the transverse spot size doubles to 0.6 /spl mu/m (FWHM). As a result, 100 /spl mu/m-aperture devices emit up to 8.1 W CW from their front facets.
8 W CW front-facet power from 100 /spl mu/m-aperture, Al-free, 0.98 /spl mu/m diode lasers with large optical cavity
1996-01-01
161878 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
8W CW Front-Facet Power from 100 m-aperture, Al-free, 0.98 m Diode Lasers with Large Optical Cavity
British Library Conference Proceedings | 1996
|High Performance InGaAs/InGaAsP/AlGaAs Diode Lasers (Lambda=0.98 mum) Grown by MOCVD
British Library Conference Proceedings | 1999
|Reliability of 1.48m and 0.98 m Pump Lasers
British Library Conference Proceedings | 1994
|0.98m Multiple Quantum Well Tunneling Injection Lasers Extrapolated
British Library Conference Proceedings | 1996
|