By increasing the optical-cavity thickness of SCH-SL-DQW InGaAs/InGaP/GaAs (/spl lambda/=0.98 /spl mu/m) lasers from 0.2 /spl mu/m to 1.0 /spl mu/m the internal loss decreases fivefold to /spl sim/1.5 cm/sup -1/, and the transverse spot size doubles to 0.6 /spl mu/m (FWHM). As a result, 100 /spl mu/m-aperture devices emit up to 8.1 W CW from their front facets.


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    Titel :

    8 W CW front-facet power from 100 /spl mu/m-aperture, Al-free, 0.98 /spl mu/m diode lasers with large optical cavity


    Beteiligte:
    Mawst, L.J. (Autor:in) / Bhattacharya, A. (Autor:in) / Lopez, J. (Autor:in) / Botez, D. (Autor:in) / Garbuzov, D.Z. (Autor:in) / DeMarco, L. (Autor:in) / Connolly, J.C. (Autor:in) / Jansen, M. (Autor:in) / Fang, F. (Autor:in) / Nabiev, R.F. (Autor:in)


    Erscheinungsdatum :

    1996-01-01


    Format / Umfang :

    161878 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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