In this paper we present linewidth measurements on a double-heterostructure AlGaAs laser diode as a function of temperature, and report on the experimentally determined Schawlow-Townes linewidth. Further, we develop a model to explain both the origin of the power-independent linewidth, and the reasons why its magnitude increases with decreasing lattice temperature.
Carrier heating and the power independent linewidth in semiconductor lasers
1997-01-01
170174 byte
Conference paper
Electronic Resource
English
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