In this paper we present linewidth measurements on a double-heterostructure AlGaAs laser diode as a function of temperature, and report on the experimentally determined Schawlow-Townes linewidth. Further, we develop a model to explain both the origin of the power-independent linewidth, and the reasons why its magnitude increases with decreasing lattice temperature.


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    Title :

    Carrier heating and the power independent linewidth in semiconductor lasers


    Contributors:
    Ongstad, A.P. (author) / Dente, G.C. (author) / Tilton, M.L. (author)


    Publication date :

    1997-01-01


    Size :

    170174 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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