In this paper we present linewidth measurements on a double-heterostructure AlGaAs laser diode as a function of temperature, and report on the experimentally determined Schawlow-Townes linewidth. Further, we develop a model to explain both the origin of the power-independent linewidth, and the reasons why its magnitude increases with decreasing lattice temperature.
Carrier heating and the power independent linewidth in semiconductor lasers
01.01.1997
170174 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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