In this paper we present linewidth measurements on a double-heterostructure AlGaAs laser diode as a function of temperature, and report on the experimentally determined Schawlow-Townes linewidth. Further, we develop a model to explain both the origin of the power-independent linewidth, and the reasons why its magnitude increases with decreasing lattice temperature.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Carrier heating and the power independent linewidth in semiconductor lasers


    Beteiligte:
    Ongstad, A.P. (Autor:in) / Dente, G.C. (Autor:in) / Tilton, M.L. (Autor:in)


    Erscheinungsdatum :

    01.01.1997


    Format / Umfang :

    170174 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Carrier Heating and the Power Independent Linewidth in Semiconductor Lasers

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1997


    The frequency noise and spectral linewidth in semiconductor ring lasers

    Zexin, K. / Huanlu, L. / Chao, L. et al. | British Library Online Contents | 2014


    Narrow-linewidth distributed feedback semiconductor lasers operating at 2 μm

    Forouhar, S. / Ksendzov, A. / Frez, C. et al. | NTRS | 2012


    Linewidth enhancement factor of quantumdot lasers

    Qasaimeh, O. | British Library Online Contents | 2005


    High Power and Narrow Linewidth 1.3 m Distributed Feedback Lasers

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1997