In this paper, THz-radiation power from semiconductors irradiated with a femtosecond-optical pulse is significantly enhanced and reaches up to 110 /spl mu/W under 1.7 T magnetic field; we also found a dramatic change of ellipticity. A mode-locked Ti:sapphire laser delivered 100-fsec pulses at 760 nm for the excitation.


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    Title :

    High average power THz-radiation from femtosecond optical-pulse irradiated semiconductors under the magnetic field


    Contributors:
    Ohtake, H. (author) / Izumida, S. (author) / Liu, Z. (author) / Yamanaka, T. (author) / Sarukura, N. (author)


    Publication date :

    1997-01-01


    Size :

    185963 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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