In this paper, THz-radiation power from semiconductors irradiated with a femtosecond-optical pulse is significantly enhanced and reaches up to 110 /spl mu/W under 1.7 T magnetic field; we also found a dramatic change of ellipticity. A mode-locked Ti:sapphire laser delivered 100-fsec pulses at 760 nm for the excitation.


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    Titel :

    High average power THz-radiation from femtosecond optical-pulse irradiated semiconductors under the magnetic field


    Beteiligte:
    Ohtake, H. (Autor:in) / Izumida, S. (Autor:in) / Liu, Z. (Autor:in) / Yamanaka, T. (Autor:in) / Sarukura, N. (Autor:in)


    Erscheinungsdatum :

    01.01.1997


    Format / Umfang :

    185963 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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