In this paper, THz-radiation power from semiconductors irradiated with a femtosecond-optical pulse is significantly enhanced and reaches up to 110 /spl mu/W under 1.7 T magnetic field; we also found a dramatic change of ellipticity. A mode-locked Ti:sapphire laser delivered 100-fsec pulses at 760 nm for the excitation.
High average power THz-radiation from femtosecond optical-pulse irradiated semiconductors under the magnetic field
01.01.1997
185963 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
British Library Conference Proceedings | 1997
|British Library Online Contents | 2000
|British Library Conference Proceedings | 2003
|Magnetic-field dependence of THz-radiation from femtosecond-laser-irradiated InAs up to 27 T
British Library Conference Proceedings | 2003
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