We developed high-frequency (HF) photodiodes (PD) and photoconductors (PC) operated in spectral range 1 - 20 ¿m and frequencies over 1 GHz on the basis of HgCdTe heteroepitaxial structures (HS) with special composition distribution throughout the thickness grown on ZnCdTe/GaAs substrates by molecular beam epitaxy (MBE). The measurement HF PD and PC parameters were carried out. HF PD were used for study of subthermonuclear plasma.
LWIR detectors for subthermonuclear plasma study
2006-09-01
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Conference paper
Electronic Resource
English
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