We developed high-frequency (HF) photodiodes (PD) and photoconductors (PC) operated in spectral range 1 - 20 ¿m and frequencies over 1 GHz on the basis of HgCdTe heteroepitaxial structures (HS) with special composition distribution throughout the thickness grown on ZnCdTe/GaAs substrates by molecular beam epitaxy (MBE). The measurement HF PD and PC parameters were carried out. HF PD were used for study of subthermonuclear plasma.
LWIR detectors for subthermonuclear plasma study
01.09.2006
1146871 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Hole-Impeded-Doping-Superlattice LWIR Detectors
NTRS | 1991
|LWIR heterodyne HgCdTe detectors [4340-10]
British Library Conference Proceedings | 2000
|PtSi/Si LWIR Detectors Made With p+ Doping Spikes
NTRS | 1996
|PtSi-Si LWIR Detectors Made With p+ Doping Spikes
Online Contents | 1996
LWIR Imaging Using Miniband Transport Multiple Quantum Well Infrared Detectors
British Library Conference Proceedings | 1995
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