PtSi/Si Schottky-barrier devices detecting long-wavelength infrared (LWIR) photons demonstrated. Essential feature of one of these devices is p+ "doping spike"; layer of Si about 10 Angstrom thick, located at PtSi/Si interface, and doped with electron acceptors (boron atoms) at concentration between 5 x 10(19) and 2 x 10(20) cm(-3). Doping spikes extend cutoff wavelengths of devices to greater values than otherwise possible.


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    Titel :

    PtSi/Si LWIR Detectors Made With p+ Doping Spikes


    Beteiligte:
    Lin, True-Lon (Autor:in) / Park, Jin S. (Autor:in) / George, Thomas (Autor:in) / Fathauer, Robert W. (Autor:in) / Jones, Eric W. (Autor:in) / Maserjian, Joseph (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    01.06.1996



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch






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