We have investigated the carrier capture behavior of n-type modulation-doped InAs/GaAs QDs using THz time-domain spectroscopy (THz TDS) in order to estimate the total number of electrons captured by the QDs. The THz transmission of the sample with QDs (#1) is larger than that of the sample without QDs (#2). From the THz waveforms and subsequent analysis, the #1 sample shows lower conductivity which is resulted from the smaller number of free carriers due to the capture by the QDs.


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    Title :

    Characterization of InAs/GaAs quantum dots utilizing THz time-domain spectroscopy


    Contributors:
    Oh, S. J. (author) / Kang, C. (author) / Maeng, I. H. (author) / Cho, N. K. (author) / Song, J. D. (author) / Choi, W. J. (author) / Lee, J. I. (author) / Son, J.-H. (author)


    Publication date :

    2006-09-01


    Size :

    1055849 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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