InGaAsP/InP microring lasers and optical amplifiers providing gain at 1550 nm are demonstrated. The microrings provide about 10 dB of gain in pulsed mode. Sulfur passivation is used to reduce carrier loss to surface recombination.


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    Title :

    Electrically pumped InGaAsP/InP microring optical amplifiers and lasers with surface passivation


    Contributors:
    Amarnath, K. (author) / Grover, R. (author) / Kanakaraju, S. (author) / Ping-Tong Ho, (author)


    Publication date :

    2005-01-01


    Size :

    1866530 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




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    Mikroulis, S. / Roditi, E. / Syvridis, D. | British Library Online Contents | 2008


    Direct Modulation Properties of 1.55-μm InGaAsP/InP Microring Lasers

    Mikroulis, S. / Roditi, E. / Syvridis, D. | British Library Online Contents | 2008


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    Mikroulis, S. / Roditi, E. / Syvridis, D. | British Library Online Contents | 2008