Summary form only given. In conclusion, we have fabricated a 1.55 /spl mu/m strained InGaAsP semiconductor DFB QW laser diode with a narrow divergence beam profile by monolithically integrating a vertical mode expander inside the laser cavity. Over 80mW single mode output power was obtained with the side mode suppression ratio greater than 40dB. The coupling loss of a tapered DFB LD into a lensed single mode fiber was about 2.2dB (corresponding to 60% coupling efficiency) due to circular nature of the output beam.


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    Title :

    High power 1.55 /spl mu/m DPB laser diodes integrated with vertical mode expanders


    Contributors:
    Heonsu Jeon (author) / Mathur, A. (author) / Ziari, M. (author) / Lang, R. (author)


    Publication date :

    1997-01-01


    Size :

    123857 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    High Power 1.55m DFB Laser Diodes Integrated with Vertical Mode Expanders

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1997


    High-power 1.55-/spl mu/m laser diodes with integrated vertical mode expanders

    Heonsu Jeon / Verdiell, J.-M. / Mathur, A. et al. | IEEE | 1997




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