Summary form only given. In conclusion, we have fabricated a 1.55 /spl mu/m strained InGaAsP semiconductor DFB QW laser diode with a narrow divergence beam profile by monolithically integrating a vertical mode expander inside the laser cavity. Over 80mW single mode output power was obtained with the side mode suppression ratio greater than 40dB. The coupling loss of a tapered DFB LD into a lensed single mode fiber was about 2.2dB (corresponding to 60% coupling efficiency) due to circular nature of the output beam.
High power 1.55 /spl mu/m DPB laser diodes integrated with vertical mode expanders
1997-01-01
123857 byte
Conference paper
Electronic Resource
English
High Power 1.55m DFB Laser Diodes Integrated with Vertical Mode Expanders
British Library Conference Proceedings | 1997
|ThQ3 InGaAsP-InP 1.55 mum Lasers with Integrated Mode Expanders using Fiber-Matched Leaky Waveguides
British Library Conference Proceedings | 2001
|Temperature Dependent Performance of 1.55 mum AlGaInAs Laser Diodes
British Library Conference Proceedings | 2005
|