Summary form only given. In conclusion, we have fabricated a 1.55 /spl mu/m strained InGaAsP semiconductor DFB QW laser diode with a narrow divergence beam profile by monolithically integrating a vertical mode expander inside the laser cavity. Over 80mW single mode output power was obtained with the side mode suppression ratio greater than 40dB. The coupling loss of a tapered DFB LD into a lensed single mode fiber was about 2.2dB (corresponding to 60% coupling efficiency) due to circular nature of the output beam.
High power 1.55 /spl mu/m DPB laser diodes integrated with vertical mode expanders
01.01.1997
123857 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
High Power 1.55m DFB Laser Diodes Integrated with Vertical Mode Expanders
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