Summary form only given. In conclusion, we have fabricated a 1.55 /spl mu/m strained InGaAsP semiconductor DFB QW laser diode with a narrow divergence beam profile by monolithically integrating a vertical mode expander inside the laser cavity. Over 80mW single mode output power was obtained with the side mode suppression ratio greater than 40dB. The coupling loss of a tapered DFB LD into a lensed single mode fiber was about 2.2dB (corresponding to 60% coupling efficiency) due to circular nature of the output beam.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    High power 1.55 /spl mu/m DPB laser diodes integrated with vertical mode expanders


    Beteiligte:
    Heonsu Jeon (Autor:in) / Mathur, A. (Autor:in) / Ziari, M. (Autor:in) / Lang, R. (Autor:in)


    Erscheinungsdatum :

    01.01.1997


    Format / Umfang :

    123857 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    High Power 1.55m DFB Laser Diodes Integrated with Vertical Mode Expanders

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1997


    High-power 1.55-/spl mu/m laser diodes with integrated vertical mode expanders

    Heonsu Jeon / Verdiell, J.-M. / Mathur, A. et al. | IEEE | 1997




    Temperature Dependent Performance of 1.55 mum AlGaInAs Laser Diodes

    Yang, C. | British Library Conference Proceedings | 2005