In this paper, we report the experimental results of efficient nonlinear polarization switching in a single quantum well amplifier and show that the numerical simulations based on a simple model agree reasonably well with the experimental data. The sample consisted of an InGaAs well, GaAs barriers, and graded AlGaAs cladding layers. It lased at 974 nm. The electro-luminescence shows a peak near 970 nm in the TE mode and a peak near 940 nm in the TM mode.


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    Title :

    Power-dependent polarization switching and pulse narrowing in a semiconductor quantum well amplifier


    Contributors:
    Ming-Shan Lin (author) / Din-Wei Huang (author) / Yang, C.C. (author)


    Publication date :

    1995-01-01


    Size :

    153018 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Power-Dependent Polarization Switching and Pulse Narrowing in a Semiconductor Quantum Well Amplifier

    IEEE / Lasers and Electro-Optics Society | British Library Conference Proceedings | 1995


    Nonlinear polarization switching in an InGaAs/GaAs quantum well amplifier

    Lin, M.-S. / Yang, C. C. / Hong, M. et al. | British Library Conference Proceedings | 1995