In this paper, we report the experimental results of efficient nonlinear polarization switching in a single quantum well amplifier and show that the numerical simulations based on a simple model agree reasonably well with the experimental data. The sample consisted of an InGaAs well, GaAs barriers, and graded AlGaAs cladding layers. It lased at 974 nm. The electro-luminescence shows a peak near 970 nm in the TE mode and a peak near 940 nm in the TM mode.
Power-dependent polarization switching and pulse narrowing in a semiconductor quantum well amplifier
01.01.1995
153018 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Power-Dependent Polarization Switching and Pulse Narrowing in a Semiconductor Quantum Well Amplifier
British Library Conference Proceedings | 1995
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