This report gives the preliminary results of using a three monolayer GaAs layer in a lattice matched InGaAs quantum well. Referring to earlier work on thin strained layers, we choose to call this a delta-strained quantum well structure. One of the important advantages of this novel structure is the ease of MBE growth.
A novel structure of delta-strained quantum well for polarization insensitive semiconductor devices at 1.55 /spl mu/m
1996-01-01
165008 byte
Conference paper
Electronic Resource
English
British Library Conference Proceedings | 1996
|British Library Conference Proceedings | 1997
|British Library Online Contents | 2003
|Polarization Independent delta-Strained InGaAs/InGaAsP Quantum Well Waveguide Modulator
British Library Conference Proceedings | 1999
|1.55 m Dual Polarization Lasers Containing Tensile and Compressive Strained Quantum Wells
British Library Conference Proceedings | 1994
|