This report gives the preliminary results of using a three monolayer GaAs layer in a lattice matched InGaAs quantum well. Referring to earlier work on thin strained layers, we choose to call this a delta-strained quantum well structure. One of the important advantages of this novel structure is the ease of MBE growth.


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    Title :

    A novel structure of delta-strained quantum well for polarization insensitive semiconductor devices at 1.55 /spl mu/m


    Contributors:
    Hovinen, M. (author) / Gopalan, B. (author) / Johnson, F.G. (author) / Dagenais, M. (author)


    Publication date :

    1996-01-01


    Size :

    165008 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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