This report gives the preliminary results of using a three monolayer GaAs layer in a lattice matched InGaAs quantum well. Referring to earlier work on thin strained layers, we choose to call this a delta-strained quantum well structure. One of the important advantages of this novel structure is the ease of MBE growth.


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    Titel :

    A novel structure of delta-strained quantum well for polarization insensitive semiconductor devices at 1.55 /spl mu/m


    Beteiligte:
    Hovinen, M. (Autor:in) / Gopalan, B. (Autor:in) / Johnson, F.G. (Autor:in) / Dagenais, M. (Autor:in)


    Erscheinungsdatum :

    1996-01-01


    Format / Umfang :

    165008 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1996


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