In this paper, we study the mechanisms of the 4H-SiC avalanche photodiode (APD) dark current and find that the mesa sidewall leakage current is the primary contributor. Improving the sidewall passivation decreases the device dark current.
Low dark current 4H-SiC avalanche photodiodes
2003-01-01
135390 byte
Conference paper
Electronic Resource
English
Low Dark Current 4H-SiC Avalanche Photodiodes
British Library Conference Proceedings | 2003
|Dark-current characteristics of GaN-based UV avalanche photodiodes [9522-147]
British Library Conference Proceedings | 2015
Improved Planar InAs Avalanche Photodiodes With Reduced Dark Current and Increased Responsivity
British Library Online Contents | 2019
Dependence of dark current on carrier lifetime for InGaAs/InP avalanche photodiodes
British Library Online Contents | 2015
|