In this paper, we study the mechanisms of the 4H-SiC avalanche photodiode (APD) dark current and find that the mesa sidewall leakage current is the primary contributor. Improving the sidewall passivation decreases the device dark current.


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    Title :

    Low dark current 4H-SiC avalanche photodiodes


    Contributors:
    Guo, X. (author) / Beck, A. (author) / Yang, B. (author) / Campbell, J.C. (author)


    Publication date :

    2003-01-01


    Size :

    135390 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Low Dark Current 4H-SiC Avalanche Photodiodes

    IEEE | British Library Conference Proceedings | 2003


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