In this paper, we study the mechanisms of the 4H-SiC avalanche photodiode (APD) dark current and find that the mesa sidewall leakage current is the primary contributor. Improving the sidewall passivation decreases the device dark current.
Low dark current 4H-SiC avalanche photodiodes
01.01.2003
135390 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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