We can circumvent the fast phonon scattering loss in type-I QC lasers, while retaining the cascaded tunneling injection advantage, by utilizing photon emission between an electron state and a hole state in a new class of QC lasers based on type-II QWs, which was first proposed by Yang and is referred to as type-II QC lasers. The type-II QC lasers can have a higher radiative efficiency because the phonon relaxation process is greatly suppressed in an interband transition. Here, we report the first observation of mid-IR electroluminescence in such a type-II QC laser structure. We illustrates the band diagram of two periods of an InAs-AlSb-GaSb type-II QC laser diode under a forward bias.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Mid-IR interband cascade light emitting diodes based on type-II quantum wells


    Contributors:
    Yang, R.Q. (author) / Chih-Hsiang Lin, (author) / Chang, P.C. (author) / Murry, S.J. (author) / Zhang, D. (author) / Pei, S.S. (author) / Kurtz, S.R. (author) / Chu, S.-N.G. (author) / Ren, F. (author)


    Publication date :

    1996-01-01


    Size :

    150310 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Mid-IR Interband Cascade Light Emitting Diodes Based on Type-II Quantum Wells

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1996


    M-shaped quantum wells for active region of interband cascade laser

    Ryczko, K. / Sȩk, G. | British Library Online Contents | 2019



    Modeling of type-II quantum well and interband cascade lasers

    Vurgaftman, I. / Meyer, J.R. / Ram-Mohan, L.R. | IEEE | 1997