We can circumvent the fast phonon scattering loss in type-I QC lasers, while retaining the cascaded tunneling injection advantage, by utilizing photon emission between an electron state and a hole state in a new class of QC lasers based on type-II QWs, which was first proposed by Yang and is referred to as type-II QC lasers. The type-II QC lasers can have a higher radiative efficiency because the phonon relaxation process is greatly suppressed in an interband transition. Here, we report the first observation of mid-IR electroluminescence in such a type-II QC laser structure. We illustrates the band diagram of two periods of an InAs-AlSb-GaSb type-II QC laser diode under a forward bias.


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    Titel :

    Mid-IR interband cascade light emitting diodes based on type-II quantum wells


    Beteiligte:
    Yang, R.Q. (Autor:in) / Chih-Hsiang Lin, (Autor:in) / Chang, P.C. (Autor:in) / Murry, S.J. (Autor:in) / Zhang, D. (Autor:in) / Pei, S.S. (Autor:in) / Kurtz, S.R. (Autor:in) / Chu, S.-N.G. (Autor:in) / Ren, F. (Autor:in)


    Erscheinungsdatum :

    01.01.1996


    Format / Umfang :

    150310 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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